DMN26D0UFB4-7
Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMN26D0UFB4-7
Datasheet:
Description:
MOSFETs DFN-3 SMD/SMT N-Channel number of channels:1 350 mW 20 V Continuous Drain Current (ID):240 mA
| Parameter | Value |
|---|---|
| Length | 1.05 mm |
| Width | 650 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 10 Ω |
| Height | 350 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 350 mW |
| Power Dissipation | 350 mW |
| Number of Channels | 1 |
| Input capacitance | 14.1 pF |
| Continuous Drain Current (ID) | 240 mA |
| Rds On Max | 3 Ω |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 3.8 ns |
| Turn-Off Delay Time | 13.4 ns |
| Element Configuration | Single |
| Fall Time | 15.2 ns |
| Rise Time | 7.9 ns |
| Drain to Source Resistance | 1.8 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel |
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